| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 可编程 | 驱动配置 | 通道类型 | 驱动器数量 | 门类型 | 电压 - 电源 | 逻辑电压 - VIL, VIH | 电流 - 峰值输出(源,吸) | 输入类型 | 高侧电压 - 最大值(自举) | 上升/下降时间(典型值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRS2012STRIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
4,650 |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | Not Verified | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.7V, 2.5V | 2A, 2A | Non-Inverting | 200 V | 22ns, 15ns | -40°C ~ 125°C (TA) | Automotive | AEC-Q100 | Surface Mount | PG-DSO-8 |
|
IRS21281STRPBFIC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
2,842 |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | Not Verified | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRS2128STRPBFIC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies |
4,814 |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | Not Verified | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IR2181PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
4,740 |
|
数据手册 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
|
IR2122IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
3,349 |
|
数据手册 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 13V ~ 20V | 0.8V, 3V | 130mA, 130mA | Inverting | 600 V | 250ns, 250ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 8-PDIP |
|
|
IR2112-2IC GATE DRVR HI/LOW SIDE 16DIP Infineon Technologies |
4,453 |
|
数据手册 |
- | 16-DIP (0.300", 7.62mm), 14 Leads | Tube | Obsolete | Not Verified | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | - | - | Through Hole | 16-PDIP |
|
6EDL04I06NCX1SA1IC GATE DRVR HALF-BRIDGE CHIP Infineon Technologies |
1,965 |
|
数据手册 |
EiceDRIVER™ | Die | Bulk | Active | Not Verified | Half-Bridge | 3-Phase | 6 | IGBT | 13V ~ 17.5V | 1.1V, 1.7V | - | Non-Inverting | 600 V | 60ns, 26ns | -40°C ~ 125°C (TJ) | - | - | Surface Mount | Chip |
|
6EDL04I06PCX1SA1IC GATE DRVR HALF-BRIDGE CHIP Infineon Technologies |
2,294 |
|
数据手册 |
EiceDRIVER™ | Die | Bulk | Active | Not Verified | Half-Bridge | 3-Phase | 6 | IGBT | 13V ~ 17.5V | 1.1V, 1.7V | - | Non-Inverting | 600 V | 60ns, 26ns | -40°C ~ 125°C (TJ) | - | - | Surface Mount | Chip |
|
6EDL04N06PCX1SA1IC GATE DRVR HALF-BRIDGE CHIP Infineon Technologies |
4,573 |
|
数据手册 |
EiceDRIVER™ | Die | Bulk | Active | Not Verified | Half-Bridge | 3-Phase | 6 | IGBT | 13V ~ 17.5V | 1.1V, 1.7V | - | Non-Inverting | 600 V | 60ns, 26ns | -40°C ~ 125°C (TJ) | - | - | Surface Mount | Chip |
|
IR21091STRPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
1,966 |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | Not Verified | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |