IGBT 模块

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 配置 电压 - 集电极发射极击穿(最大值) 电流 - 集电极 (Ic)(最大值) 功率 - 最大值 导通电压 (Vce(on))(最大值)@ Vge, Ic 电流 - 集电极截止(最大值) 输入电容 (Cies) @ Vce 输入 NTC 热敏电阻 工作温度 安装类型 供应商设备封装




































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
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结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 IGBT 类型 配置 电压 - 集电极发射极击穿(最大值) 电流 - 集电极 (Ic)(最大值) 功率 - 最大值 导通电压 (Vce(on))(最大值)@ Vge, Ic 电流 - 集电极截止(最大值) 输入电容 (Cies) @ Vce 输入 NTC 热敏电阻 工作温度 安装类型 供应商设备封装
MIXA151W1200EH

MIXA151W1200EH

IGBT MODULE 1200V 220A 695W

IXYS

8,477
MIXA151W1200EH

数据手册

- - Box Active PT Three Phase Inverter 1200 V 220 A 695 W 2.1V @ 15V, 150A 500 µA - Standard No -40°C ~ 125°C (TJ) - -
MIXA20WB1200TML

MIXA20WB1200TML

IGBT MOD 1200V 28A MINIPACK2

IXYS

7,837
MIXA20WB1200TML

数据手册

- MiniPack2 Box Active PT Three Phase Inverter with Brake 1200 V 28 A 100 W 2.1V @ 15V, 16A 100 µA - Three Phase Bridge Rectifier Yes -40°C ~ 125°C (TJ) Chassis Mount MiniPack2
CM100TX-24S1

CM100TX-24S1

IGBT MOD 1200V 100A 625W

Powerex Inc.

3,756
CM100TX-24S1

数据手册

- Module Tray Active - Three Level Inverter 1200 V 100 A 625 W 2.25V @ 15V, 100A 1 mA 10 nF @ 10 V Standard Yes -40°C ~ 150°C (TJ) - Module
VS-CPV362M4FPBF

VS-CPV362M4FPBF

IGBT MODULE 600V 8.8A 23W IMS-2

Vishay General Semiconductor - Diodes Division

9,271
VS-CPV362M4FPBF

数据手册

- 19-SIP (13 Leads), IMS-2 Bulk Obsolete - - 600 V 8.8 A 23 W 1.7V @ 15V, 4.8A 250 µA 340 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole IMS-2
VS-EMG050J60N

VS-EMG050J60N

IGBT MOD 600V 88A 338W EMIPAK2

Vishay General Semiconductor - Diodes Division

9,087
VS-EMG050J60N

数据手册

- EMIPAK2 Bulk Obsolete - Half Bridge 600 V 88 A 338 W 2.1V @ 15V, 50A 100 µA 9.5 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount EMIPAK2
VS-ENQ030L120S

VS-ENQ030L120S

IGBT MOD 1200V 61A EMIPAK-1B

Vishay General Semiconductor - Diodes Division

7,623
VS-ENQ030L120S

数据手册

- EMIPAK-1B Bulk Active Trench Three Level Inverter 1200 V 61 A 216 W 2.52V @ 15V, 30A 230 µA 3.34 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount EMIPAK-1B
VS-ETL015Y120H

VS-ETL015Y120H

IGBT MOD 1200V 22A 89W EMIPAK-2B

Vishay General Semiconductor - Diodes Division

8,855
VS-ETL015Y120H

数据手册

- EMIPAK-2B Bulk Active Trench - 1200 V 22 A 89 W 3.03V @ 15V, 15A 75 µA 1.07 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount EMIPAK-2B
VS-GA100NA60UP

VS-GA100NA60UP

IGBT MOD 600V 100A 250W SOT227

Vishay General Semiconductor - Diodes Division

3,404
VS-GA100NA60UP

数据手册

- SOT-227-4, miniBLOC Bulk Obsolete - Single 600 V 100 A 250 W 2.1V @ 15V, 50A 250 µA 7.4 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount SOT-227
VS-GA100TS120UPBF

VS-GA100TS120UPBF

IGBT MOD 1200V 182A INT-A-PAK

Vishay General Semiconductor - Diodes Division

4,456
VS-GA100TS120UPBF

数据手册

- INT-A-Pak Bulk Obsolete - Half Bridge 1200 V 182 A 520 W 3V @ 15V, 100A 1 mA 18.67 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount INT-A-PAK
VS-GA200HS60S1PBF

VS-GA200HS60S1PBF

IGBT MOD 600V 480A INT-A-PAK

Vishay General Semiconductor - Diodes Division

2,070
VS-GA200HS60S1PBF

数据手册

- INT-A-Pak Bulk Obsolete - Half Bridge 600 V 480 A 830 W 1.21V @ 15V, 200A 1 mA 32.5 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount INT-A-PAK
VS-GA200SA60UP

VS-GA200SA60UP

IGBT MOD 600V 200A 500W SOT227

Vishay General Semiconductor - Diodes Division

2,980
VS-GA200SA60UP

数据手册

- SOT-227-4, miniBLOC Bulk Obsolete - Single 600 V 200 A 500 W 1.9V @ 15V, 100A 1 mA 16.5 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount SOT-227
VS-GA200TH60S

VS-GA200TH60S

IGBT MOD 600V 260A INT-A-PAK

Vishay General Semiconductor - Diodes Division

6,690
VS-GA200TH60S

数据手册

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Half Bridge 600 V 260 A 1042 W 1.9V @ 15V, 200A (Typ) 5 µA 13.1 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GA300TD60S

VS-GA300TD60S

IGBT MOD 600V 530A INT-A-PAK

Vishay General Semiconductor - Diodes Division

6,513
VS-GA300TD60S

数据手册

- Dual INT-A-PAK (3 + 8) Bulk Obsolete - Half Bridge 600 V 530 A 1136 W 1.45V @ 15V, 300A 750 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount Dual INT-A-PAK
VS-GA400TD60S

VS-GA400TD60S

IGBT MOD 600V 750A INT-A-PAK

Vishay General Semiconductor - Diodes Division

2,493
VS-GA400TD60S

数据手册

- Dual INT-A-PAK (3 + 8) Bulk Obsolete - Half Bridge 600 V 750 A 1563 W 1.52V @ 15V, 400A 1 mA - Standard No -40°C ~ 150°C (TJ) Chassis Mount Dual INT-A-PAK
VS-GB05XP120KTPBF

VS-GB05XP120KTPBF

IGBT MODULE 1200V 0 76W MTP

Vishay General Semiconductor - Diodes Division

6,927
VS-GB05XP120KTPBF

数据手册

- 12-MTP Module Bulk Active - Three Phase Inverter 1200 V 12 A 76 W - 250 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount MTP
VS-GB100LH120N

VS-GB100LH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

9,156
VS-GB100LH120N

数据手册

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Single 1200 V 200 A 833 W 1.77V @ 15V, 100A (Typ) 1 mA 8.96 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GB100LP120N

VS-GB100LP120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

6,999
VS-GB100LP120N

数据手册

- INT-A-Pak Bulk Obsolete - Single 1200 V 200 A 658 W 1.8V @ 15V, 100A (Typ) 1 mA 7.43 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount INT-A-PAK
VS-GB100NH120N

VS-GB100NH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

5,526
VS-GB100NH120N

数据手册

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Single 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GB100TH120N

VS-GB100TH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

4,636
VS-GB100TH120N

数据手册

- Double INT-A-PAK (3 + 4) Bulk Obsolete - Half Bridge 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount Double INT-A-PAK
VS-GB100TH120U

VS-GB100TH120U

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division

4,603
VS-GB100TH120U

数据手册

- Double INT-A-PAK (3 + 4) Bulk Obsolete NPT Half Bridge 1200 V 200 A 1136 W 3.6V @ 15V, 100A 5 mA 8.45 nF @ 20 V Standard No -40°C ~ 150°C (TJ) Chassis Mount Double INT-A-PAK
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