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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK1482-T-AZSMALL SIGNAL FET NEC Corporation |
2,162 | - |
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数据手册 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4V, 10V | 400mOhm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 230 pF @ 10 V | - | 750W (Ta) | 150°C | - | - | Through Hole | TO-92 |
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2SK4070-ZK-E2-AYN-CHANNEL MOSFET NEC Corporation |
2,500 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 10V | 11Ohm @ 500mA, 10V | 3.5V @ 1mA | 5 nC @ 10 V | ±30V | 110 pF @ 10 V | - | 1W (Ta), 22W (Tc) | 150°C | - | - | Surface Mount | TO-252 (MP-3ZK) |
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2SK4076-ZK-E1-AYN-CHANNEL MOSFET NEC Corporation |
2,500 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 16mOhm @ 17.5A, 10V | 2.5V @ 1mA | 24 nC @ 10 V | ±20V | 1200 pF @ 10 V | - | 1W (Ta), 26W (Tc) | 150°C | - | - | Surface Mount | TO-252 (MP-3ZK) |
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NP32N055SHE-E1-AZN-CHANNEL POWER MOSFET NEC Corporation |
4,900 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SK3634-Z-AZ6A, 200V, N-CHANNEL MOSFET NEC Corporation |
8,307 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4.5V @ 1mA | 9 nC @ 10 V | ±30V | 270 pF @ 10 V | - | 1W (Ta), 20W (Tc) | 150°C | - | - | Surface Mount | TO-252 |
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NP80N055MDG-S18-AYMOSFET N-CH 55V 80A TO220 NEC Corporation |
6,300 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | - | 6.9mOhm @ 40A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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2SK3058-Z-E1-AZN-CHANNEL POWER MOSFET NEC Corporation |
1,000 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A | 4V, 10V | 17mOhm @ 28A, 10V | 2V @ 1mA | 45 nC @ 10 V | 20V | 2100 pF @ 10 V | - | 1.5W | -55°C ~ 150°C | - | - | Surface Mount | TO-263, TO-220SMD |
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NP80N04NDG-S18-AYMOSFET N-CH 40V 80A TO262 NEC Corporation |
1,400 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | - | 4.8mOhm @ 40A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C | Automotive | AEC-Q101 | Through Hole | TO-262 |
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NP80N04NLG-S18-AYMOSFET N-CH 40V 80A TO262 NEC Corporation |
750 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | - | 4.8mOhm @ 40A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-262 |
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NP80N03MDE-S18-AY80A, 30V, 0.011OHM, N-CHANNEL , NEC Corporation |
700 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.5V @ 250µA | 72 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 1.8W (Ta), 120W (Tc) | 175°C | - | - | Through Hole | MP-25K |
