电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTT75N10MOSFET N-CH 100V 75A TO268 IXYS |
9,767 | - |
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数据手册 |
MegaMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 20mOhm @ 37.5A, 10V | 4V @ 4mA | 260 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFK210N17TMOSFET N-CH 170V 210A TO264AA IXYS |
7,541 | - |
|
数据手册 |
GigaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 170 V | 210A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 4mA | 285 nC @ 10 V | ±20V | 18800 pF @ 25 V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFX210N17TMOSFET N-CH 170V 210A PLUS247-3 IXYS |
3,370 | - |
|
数据手册 |
GigaMOS™ | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 170 V | 210A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 4mA | 285 nC @ 10 V | ±20V | 18800 pF @ 25 V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXFN260N17TMOSFET N-CH 170V 245A SOT227B IXYS |
8,227 | - |
|
数据手册 |
GigaMOS™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 170 V | 245A (Tc) | 10V | 6.5mOhm @ 60A, 10V | 5V @ 8mA | 400 nC @ 10 V | ±20V | 24000 pF @ 25 V | - | 1090W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFK260N17TMOSFET N-CH 170V 260A TO264AA IXYS |
5,027 | - |
|
数据手册 |
GigaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 170 V | 260A (Tc) | 10V | 6.5mOhm @ 60A, 10V | 5V @ 8mA | 400 nC @ 10 V | ±20V | 24000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFX260N17TMOSFET N-CH 170V 260A PLUS247-3 IXYS |
6,452 | - |
|
数据手册 |
GigaMOS™ | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 170 V | 260A (Tc) | 10V | 6.5mOhm @ 60A, 10V | 5V @ 8mA | 400 nC @ 10 V | ±20V | 24000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXTU2N80PMOSFET N-CH 800V 2A TO251 IXYS |
4,608 | - |
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数据手册 |
PolarHV™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 6Ohm @ 1A, 10V | 5.5V @ 50µA | 10.6 nC @ 10 V | ±30V | 440 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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IXTY4N60PMOSFET N-CH 600V 4A TO252 IXYS |
8,738 | - |
|
数据手册 |
PolarHV™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5.5V @ 100µA | 13 nC @ 10 V | ±30V | 635 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IXTV02N250SMOSFET N-CH 2500V 200MA PLUS220 IXYS |
5,575 | - |
|
数据手册 |
- | PLUS-220SMD | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2500 V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4 nC @ 10 V | ±20V | 116 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PLUS-220SMD |
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IXTV03N400SMOSFET N-CH 4000V 300MA PLUS220 IXYS |
2,382 | - |
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数据手册 |
- | PLUS-220SMD | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4000 V | 300mA (Tc) | 10V | 290Ohm @ 500mA, 10V | 4V @ 250µA | 16.3 nC @ 10 V | ±20V | 435 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PLUS-220SMD |
