上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MMIX1F420N10TMOSFET N-CH 100V 334A 24SMPD IXYS |
3,432 | - |
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数据手册 |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 334A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 4700 pF @ 10 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
|
IXFN70N120SKSICFET N-CH 1200V 68A SOT227B IXYS |
2,777 | - |
|
数据手册 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 161 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXTP02N50DMOSFET N-CH 500V 200MA TO220AB IXYS |
4,368 | - |
|
数据手册 |
Depletion | TO-220-3 | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 200mA (Tc) | 10V | 30Ohm @ 50mA, 0V | 5V @ 25µA | - | ±20V | 120 pF @ 25 V | - | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFY8N65X2MOSFET N-CH 650V 8A TO252AA IXYS |
4,753 | - |
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数据手册 |
HiPerFET™, Ultra X2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 450mOhm @ 4A, 10V | 5V @ 250µA | 11 nC @ 10 V | ±30V | 790 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IXTU8N70X2MOSFET N-CH 700V 8A TO251-3 IXYS |
4,829 | - |
|
数据手册 |
Ultra X2 | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 10 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251-3 |
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IXTP8N70X2MOSFET N-CH 700V 8A TO220-3 IXYS |
2,883 | - |
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数据手册 |
Ultra X2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 10 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFP20N50P3MMOSFET N-CH 500V 8A TO220AB IXYS |
2,379 | - |
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数据手册 |
HiPerFET™, Polar3™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 1.5mA | 36 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFP110N15T2MOSFET N-CH 150V 110A TO220AB IXYS |
3,173 | - |
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数据手册 |
HiPerFET™, TrenchT2™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 110A (Tc) | 10V | 13mOhm @ 55A, 10V | 4.5V @ 250µA | 150 nC @ 10 V | ±20V | 8600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXTY4N65X2MOSFET N-CH 650V 4A TO252 IXYS |
3,247 | - |
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数据手册 |
Ultra X2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3 nC @ 10 V | ±30V | 455 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IXTH12N70X2MOSFET N-CH 700V 12A TO247 IXYS |
4,808 | - |
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数据手册 |
Ultra X2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
