电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTU05N120MOSFET N-CH 1200V 500MA TO251 IXYS |
6,201 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 500mA (Tc) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-251AA |
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IXTU01N80MOSFET N-CH 800V 100MA TO251 IXYS |
2,214 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 100mA (Tc) | 10V | 50Ohm @ 100mA, 10V | 4.5V @ 25µA | 8 nC @ 10 V | ±20V | 60 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
IXTY01N100-TRLMOSFET N-CH 1000V 100MA TO252 IXYS |
3,380 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 100mA (Tc) | 10V | 80Ohm @ 50mA, 10V | 4.5V @ 25µA | 6.9 nC @ 10 V | ±20V | 54 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IXTP05N100PMOSFET N-CH 1000V 500MA TO220AB IXYS |
4,868 | - |
|
数据手册 |
Polar | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 500mA (Tc) | 10V | 30Ohm @ 250mA, 10V | 4V @ 50µA | 8.1 nC @ 10 V | ±20V | 196 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXFP5N50P3MOSFET N-CH 500V 5A TO220AB IXYS |
8,079 | - |
|
数据手册 |
HiPerFET™, Polar3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.65Ohm @ 2.5A, 10V | 5V @ 1mA | 6.9 nC @ 10 V | ±30V | 370 pF @ 25 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXTP110N055TMOSFET N-CH 55V 110A TO220AB IXYS |
3,351 | - |
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数据手册 |
Trench | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 100µA | 67 nC @ 10 V | ±20V | 3080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IXTY12N06TMOSFET N-CH 60V 12A TO252 IXYS |
6,062 | - |
|
数据手册 |
TrenchMV™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 85mOhm @ 6A, 10V | 4V @ 25µA | 3.4 nC @ 10 V | ±20V | 256 pF @ 25 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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IXTA7N60PMOSFET N-CH 600V 7A D2-PAK IXYS |
8,604 | - |
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数据手册 |
Polar | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | - | 1.1Ohm @ 3.5A, 10V | 5.5V @ 100µA | 20 nC @ 10 V | - | 1080 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXTA110N055TMOSFET N-CH 55V 110A TO263 IXYS |
7,334 | - |
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数据手册 |
TrenchMV™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 100µA | 67 nC @ 10 V | ±20V | 3080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXFP7N60P3MOSFET N-CH 600V 7A TO220AB IXYS |
6,754 | - |
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数据手册 |
HiPerFET™, Polar3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 1.15Ohm @ 500mA, 10V | 5V @ 1mA | 13.3 nC @ 10 V | ±30V | 705 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
