电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXTN62N50LMOSFET N-CH 500V 62A SOT227B IXYS |
2,139 | - |
|
数据手册 |
Linear | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 62A (Tc) | 20V | 100mOhm @ 500mA, 20V | 5V @ 250µA | 550 nC @ 20 V | ±30V | 11500 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN50N120SICSICFET N-CH 1200V 47A SOT227B IXYS |
9,273 | - |
|
数据手册 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.4V @ 10mA | 100 nC @ 20 V | +20V, -5V | 1900 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXTA1N100PMOSFET N-CH 1000V 1A TO263 IXYS |
9,789 | - |
|
数据手册 |
Polar | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1A (Tc) | 10V | 15Ohm @ 500mA, 10V | 4.5V @ 50µA | 15.5 nC @ 10 V | ±20V | 331 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
|
IXTP4N70X2MMOSFET N-CH 700V 4A TO220 IXYS |
4,287 | - |
|
数据手册 |
Ultra X2 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 4.5V @ 250µA | 11.8 nC @ 10 V | ±30V | 386 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
|
|
IXTP8N70X2MMOSFET N-CH 700V 4A TO220 IXYS |
1,184 | - |
|
数据手册 |
Ultra X2 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 550mOhm @ 500mA, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 10 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
|
IXFY4N85XMOSFET N-CH 850V 3.5A TO252 IXYS |
5,853 | - |
|
数据手册 |
HiPerFET™, Ultra X | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 3.5A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5.5V @ 250µA | 7 nC @ 10 V | ±30V | 247 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
|
IXTA160N04T2MOSFET N-CH 40V 160A TO263 IXYS |
1,512 | - |
|
数据手册 |
TrenchT2™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 5mOhm @ 50A, 10V | 4V @ 250µA | 79 nC @ 10 V | ±20V | 4640 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AA |
|
|
IXTA24N65X2MOSFET N-CH 650V 24A TO263AA IXYS |
6,710 | - |
|
数据手册 |
Ultra X2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
|
IXTY8N70X2MOSFET N-CHANNEL 700V 8A TO252 IXYS |
5,968 | - |
|
数据手册 |
Ultra X2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 10 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IXFQ60N25X3MOSFET N-CHANNEL 250V 60A TO3P IXYS |
7,048 | - |
|
数据手册 |
HiPerFET™, Ultra X3 | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 23mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50 nC @ 10 V | ±20V | 3610 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
