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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQD8N25TFMOSFET N-CH 250V 6.2A DPAK Fairchild Semiconductor |
33,444 | - |
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数据手册 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 6.2A (Tc) | 10V | 550mOhm @ 3.1A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 530 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDS6694MOSFET N-CH 30V 12A 8SOIC Fairchild Semiconductor |
28,954 | - |
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数据手册 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 19 nC @ 5 V | ±20V | 1293 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
HUF76139S3STKN-CHANNEL POWER MOSFET Fairchild Semiconductor |
24,000 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 7.5mOhm @ 75A, 10V | 3V @ 250µA | 78 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 165W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
|
FQU10N20TUMOSFET N-CH 200V 7.6A IPAK Fairchild Semiconductor |
21,774 | - |
|
数据手册 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7.6A (Tc) | 10V | 360mOhm @ 3.8A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 2.5W (Ta), 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
HUF76633S3STMOSFET N-CH 100V 39A D2PAK Fairchild Semiconductor |
12,500 | - |
|
数据手册 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 39A (Tc) | 4.5V, 10V | 35mOhm @ 39A, 10V | 3V @ 250µA | 67 nC @ 10 V | ±16V | 1820 pF @ 25 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFS634B_FP001MOSFET N-CH 250V 8.1A TO220F Fairchild Semiconductor |
6,000 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 4.05A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF76121S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,000 | - |
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数据手册 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 4.5V, 10V | 21mOhm @ 47A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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HUF76413D3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,600 | - |
|
数据手册 |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 49mOhm @ 20A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±16V | 645 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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FQU4N25TUMOSFET N-CH 250V 3A IPAK Fairchild Semiconductor |
3,247 | - |
|
数据手册 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3A (Tc) | 10V | 1.75Ohm @ 1.5A, 10V | 5V @ 250µA | 5.6 nC @ 10 V | ±30V | 200 pF @ 25 V | - | 2.5W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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IRFS640AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,576 | - |
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数据手册 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.8A (Tc) | 10V | 180mOhm @ 4.9A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
