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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SFW9530TMMOSFET P-CH 100V 10.5A D2PAK Fairchild Semiconductor |
1,600 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 10.5A (Tc) | 10V | 300mOhm @ 5.3A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1035 pF @ 25 V | - | 3.8W (Ta), 66W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDD8586MOSFET N-CH 20V 35A TO252AA Fairchild Semiconductor |
70,000 | - |
|
数据手册 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2480 pF @ 10 V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
ISL9N315AD3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
68,479 | - |
|
数据手册 |
UltraFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 900 pF @ 15 V | - | 55W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDS4410MOSFET N-CH 30V 10A 8SOIC Fairchild Semiconductor |
39,200 | - |
|
数据手册 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 3V @ 250µA | 31 nC @ 10 V | ±20V | 1340 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
HUFA76407P3MOSFET N-CH 60V 13A TO220-3 Fairchild Semiconductor |
23,898 | - |
|
数据手册 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | 3V @ 250µA | 11.3 nC @ 10 V | ±16V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDFMA2P853MOSFET P-CH 20V 3A 6MICROFET Fairchild Semiconductor |
21,746 | - |
|
数据手册 |
PowerTrench® | 6-VDFN Exposed Pad | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±8V | 435 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
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ISL9N315AD3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
16,032 | - |
|
数据手册 |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 900 pF @ 15 V | - | 55W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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HUFA76423D3STMOSFET N-CH 60V 20A TO252AA Fairchild Semiconductor |
8,598 | - |
|
数据手册 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 32mOhm @ 20A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±16V | 1060 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
SFP2955P-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,794 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.4A (Tc) | 10V | 300mOhm @ 4.7A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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SFS9614P-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,236 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 1.27A (Tc) | 10V | 4Ohm @ 600mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 295 pF @ 25 V | - | 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
