上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR110ATMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,197 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.7A (Ta) | 10V | 400mOhm @ 2.35A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 2.5W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
|
SFR2955TFP-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,000 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 7.6A (Tc) | 10V | 300mOhm @ 3.8A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDFMA3P029ZMOSFET P-CH 30V 3.3A 6MICROFET Fairchild Semiconductor |
1,964 | - |
|
数据手册 |
PowerTrench® | 6-WDFN Exposed Pad | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.3A (Ta) | - | 87mOhm @ 3.3A, 10V | 3V @ 250µA | 10 nC @ 10 V | - | 435 pF @ 15 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MLP (2x2) |
|
|
IRFW820BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,574 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 610 pF @ 25 V | - | 3.13W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI4835DYP-CHANNEL MOSFET Fairchild Semiconductor |
1,298 | - |
|
数据手册 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±25V | 1680 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
HUFA76409D3SMOSFET N-CH 60V 18A TO252AA Fairchild Semiconductor |
1,222 | - |
|
数据手册 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±16V | 485 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDMS7698POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
7,000 | - |
|
数据手册 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 3V @ 250µA | 24 nC @ 10 V | ±20V | 1605 pF @ 15 V | - | 2.5W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
FDS6690A-NBNP006SINGLE N-CHANNEL, LOGIC LEVEL, P Fairchild Semiconductor |
5,311 | - |
|
数据手册 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 16 nC @ 5 V | ±20V | 1205 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDFS2P753ZMOSFET P-CH 30V 3A 8SOIC Fairchild Semiconductor |
389,380 | - |
|
数据手册 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3A (Ta) | - | 115mOhm @ 3A, 10V | 3V @ 250µA | 9.3 nC @ 10 V | ±25V | 455 pF @ 10 V | Schottky Diode (Isolated) | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ISL9N312AD3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
209,433 | - |
|
数据手册 |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | 3V @ 250µA | 38 nC @ 10 V | ±20V | 1450 pF @ 15 V | - | 75W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
