| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
XP60SA290DHMOSFET N-CH 600V 13.3A TO252 YAGEO XSEMI |
991 | - |
|
数据手册 |
XP60SA290D | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.3A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±20V | 1632 pF @ 100 V | - | 2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
XP6NA1R7CMTFET N-CH 60V 41.6A 190A PMPAK YAGEO XSEMI |
1,000 | - |
|
数据手册 |
XP6NA1R7C | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 41.6A (Ta), 190A (Tc) | 10V | 1.7mOhm @ 20A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PMPAK® 5 x 6 |
|
XP4NAR95CMT-AMOSFET N-CH 45V 58A 100A PMPAK YAGEO XSEMI |
1,000 | - |
|
数据手册 |
XP4NAR95 | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 58A (Ta), 100A (Tc) | 4.5V, 10V | 0.95mOhm @ 20A, 10V | 2.5V @ 250µA | 89.6 nC @ 4.5 V | ±20V | 8880 pF @ 30 V | - | 5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PMPAK® 5 x 6 |
|
XP6NA2R4ITMOSFET N-CH 60V 93A TO220CFM YAGEO XSEMI |
1,000 | - |
|
数据手册 |
XP6NA2R4 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 93A (Tc) | 10V | 2.4mOhm @ 40A, 10V | 4V @ 250µA | 192 nC @ 10 V | ±20V | 11600 pF @ 50 V | - | 1.92W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220CFM |
|
XP10N3R8PMOSFET N-CH 100V 130A TO220 YAGEO XSEMI |
991 | - |
|
数据手册 |
XP10N3R8 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 3.88mOhm @ 60A, 10V | 4V @ 250µA | 136 nC @ 10 V | ±20V | 6560 pF @ 80 V | - | 2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
XP3P3R0MTFET P-CH 30V 33.5A 125A PMPAK YAGEO XSEMI |
976 | - |
|
数据手册 |
XP3P3R0 | 8-PowerLDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 33.5A (Ta), 125A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 3V @ 250µA | 122 nC @ 4.5 V | ±20V | 15040 pF @ 15 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PMPAK® 5 x 6 |
|
XP10N3R5XTFET N-CH 100V 28.5A 100A PMPAK YAGEO XSEMI |
997 | - |
|
数据手册 |
XP10N3R5 | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28.5A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 134.4 nC @ 10 V | ±20V | 6480 pF @ 80 V | - | 5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PMPAK® 5 x 6 |
|
XP65SL380DHMOSFET N-CH 650V 10A TO252 YAGEO XSEMI |
997 | - |
|
数据手册 |
XP65SL380D | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 5V @ 250µA | 52.8 nC @ 10 V | ±20V | 1860 pF @ 100 V | - | 2W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
XP10N3R8ITFET N-CH 100V 67.7A TO220CFM YAGEO XSEMI |
1,000 | - |
|
数据手册 |
XP10N3R8 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 67.7A (Ta) | 10V | 3.88mOhm @ 35A, 10V | 4V @ 250µA | 131 nC @ 10 V | ±20V | 6560 pF @ 80 V | - | 1.92W (Ta), 32.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220CFM |
|
XP65SL190DIMOSFET N-CH 650V 20A TO220CFM YAGEO XSEMI |
976 | - |
|
数据手册 |
XP65SL190D | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 6.2A, 10V | 5V @ 250µA | 92.8 nC @ 10 V | ±20V | 3312 pF @ 100 V | - | 1.92W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220CFM |

