电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STW30N80K5MOSFET N-CH 800V 24A TO247-3 STMicroelectronics |
4,573 | - |
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数据手册 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 24A (Tc) | 10V | 180mOhm @ 12A, 10V | 5V @ 100µA | 43 nC @ 10 V | ±30V | 1530 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STL22N65M5MOSFET N-CH 650V 15A PWRFLAT HV STMicroelectronics |
4,446 | - |
|
数据手册 |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 210mOhm @ 8.5A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±25V | 1345 pF @ 100 V | - | 2.8W (Ta), 110W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
|
STW27N60M2-EPMOSFET N-CH 600V 20A TO247-3 STMicroelectronics |
6,512 | - |
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数据手册 |
MDmesh™ M2-EP | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 163mOhm @ 10A, 10V | 4.75V @ 250µA | 33 nC @ 10 V | ±25V | 1320 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STLD200N4F6AGMOSFET N-CH 40V 120A POWERFLAT STMicroelectronics |
9,225 | - |
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数据手册 |
STripFET™ F6 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6.5V, 10V | 1.5mOhm @ 75A, 10V | 4V @ 1mA | 172 nC @ 10 V | ±20V | 10700 pF @ 10 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerFlat™ (5x6) Dual Side |
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STP10LN80K5MOSFET N-CH 800V 8A TO220 STMicroelectronics |
4,803 | - |
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数据手册 |
MDmesh™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15 nC @ 10 V | ±30V | 427 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STB8NM60T4MOSFET N-CH 650V 8A D2PAK STMicroelectronics |
4,988 | - |
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数据手册 |
MDmesh™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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STF24NM60NMOSFET N-CH 600V 17A TO220FP STMicroelectronics |
8,038 | - |
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数据手册 |
MDmesh™ II | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±30V | 1400 pF @ 50 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STB10N95K5MOSFET N-CH 950V 8A D2PAK STMicroelectronics |
5,499 | - |
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数据手册 |
SuperMESH5™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 630 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STF15N80K5MOSFET N-CH 800V 14A TO220FP STMicroelectronics |
4,401 | - |
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数据手册 |
SuperMESH5™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±30V | 1100 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STW8N90K5MOSFET N-CH 900V 8A TO247-3 STMicroelectronics |
7,866 | - |
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数据手册 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
