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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STO33N60M6MOSFET N-CH 600V 25A TOLL STMicroelectronics |
2,895 | - |
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数据手册 |
MDmesh™ M6 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4 nC @ 10 V | ±25V | 1515 pF @ 100 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL (HV) |
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STP36N60M6MOSFET N-CHANNEL 600V 30A TO220 STMicroelectronics |
3,469 | - |
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数据手册 |
MDmesh™ M6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STH240N75F3-2MOSFET N CH 75V 180A H2PAK-2 STMicroelectronics |
2,164 | - |
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数据手册 |
STripFET™ III | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 180A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 87 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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STP28NM60NDMOSFET N-CH 600V 23A TO220 STMicroelectronics |
123 | - |
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数据手册 |
FDmesh™ II | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | ±25V | 2090 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STFI24N60M2MOSFET N CH 600V 18A TO281 STMicroelectronics |
474 | - |
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数据手册 |
MDmesh™ II Plus | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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STB27NM60NDMOSFET N-CH 600V 21A D2PAK STMicroelectronics |
4,294 | - |
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数据手册 |
FDmesh™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±25V | 2400 pF @ 50 V | - | 160W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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STH360N4F6-2MOSFET N-CH 40V 180A H2PAK-2 STMicroelectronics |
1,160 | - |
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数据手册 |
DeepGATE™, STripFET™ VI | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 1.25mOhm @ 60A, 10V | 4.5V @ 250µA | 340 nC @ 10 V | ±20V | 17930 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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STW38N65M5-4MOSFET N-CH 650V 30A TO247-4L STMicroelectronics |
1,224 | - |
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数据手册 |
MDmesh™ M5 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±25V | 3000 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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STP32NM50NMOSFET N CH 500V 22A TO-220 STMicroelectronics |
4,599 | - |
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数据手册 |
MDmesh™ II | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 130mOhm @ 11A, 10V | 4V @ 250µA | 62.5 nC @ 10 V | ±25V | 1973 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STWA57N65M5MOSFET N-CH 650V 42A TO247 STMicroelectronics |
1,305 | - |
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数据手册 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
