电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STW75N60DM6MOSFET N-CH 600V 72A TO247 STMicroelectronics |
338 | - |
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数据手册 |
MDmesh™ DM6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | - | - | - | - | ±25V | - | - | - | - | - | - | Through Hole | TO-247-3 |
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STWA75N60DM6MOSFET N-CH 600V 72A TO247 STMicroelectronics |
361 | - |
|
数据手册 |
MDmesh™ DM6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | - | - | - | - | ±25V | - | - | - | - | - | - | Through Hole | TO-247 Long Leads |
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STFW69N65M5MOSFET N-CH 650V 58A ISOWATT STMicroelectronics |
145 | - |
|
数据手册 |
MDmesh™ V | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 79W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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STWA40N90K5MOSFET N-CH 900V 40A TO247 STMicroelectronics |
596 | - |
|
数据手册 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 99mOhm @ 20A, 10V | 5V @ 100µA | 89 nC @ 10 V | ±30V | 3260 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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SCTL35N65G2VTRANS SJT N-CH 650V PWRFLAT HV STMicroelectronics |
5,941 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | - | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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SCTWA50N120SICFET N-CH 1200V 65A HIP247 STMicroelectronics |
378 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | 3V @ 1mA | 122 nC @ 20 V | +25V, -10V | 1900 pF @ 400 V | - | 318W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
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STY100NM60NMOSFET N CH 600V 98A MAX247 STMicroelectronics |
600 | - |
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数据手册 |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 98A (Tc) | 10V | 29mOhm @ 49A, 10V | 4V @ 250µA | 330 nC @ 10 V | 25V | 9600 pF @ 50 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
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STY60NM50MOSFET N-CH 500V 60A MAX247 STMicroelectronics |
584 | - |
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数据手册 |
MDmesh™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 560W (Tc) | 150°C (TJ) | - | - | Through Hole | MAX247™ |
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STY112N65M5MOSFET N-CH 650V 96A MAX247 STMicroelectronics |
543 | - |
|
数据手册 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 22mOhm @ 47A, 10V | 5V @ 250µA | 350 nC @ 10 V | ±25V | 16870 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | - | - | Through Hole | MAX247™ |
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STP80N1K1K6Linear IC's STMicroelectronics |
993 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 1.1Ohm @ 1.7A, 10V | 4V @ 50µA | 5.7 nC @ 10 V | ±30V | 300 pF @ 400 V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
