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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STB160N75F3MOSFET N-CH 75V 120A D2PAK STMicroelectronics |
823 | - |
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数据手册 |
STripFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4mOhm @ 60A, 10V | 4V @ 250µA | 85 nC @ 10 V | ±20V | 6750 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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STB23N80K5MOSFET N-CH 800V 16A D2PAK STMicroelectronics |
898 | - |
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数据手册 |
MDmesh™ K5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 5V @ 100µA | 33 nC @ 10 V | ±30V | 1000 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STB12NK80ZT4MOSFET N-CH 800V 10.5A D2PAK STMicroelectronics |
2,708 | - |
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数据手册 |
SuperMESH™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10.5A (Tc) | 10V | 750mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87 nC @ 10 V | ±30V | 2620 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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STB13NM60NMOSFET N-CH 600V 11A D2PAK STMicroelectronics |
950 | - |
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数据手册 |
MDmesh™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
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STW33N60M2MOSFET N-CH 600V 26A TO247 STMicroelectronics |
690 | - |
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数据手册 |
MDmesh™ II Plus | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5 nC @ 10 V | ±25V | 1781 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STP43N60DM2MOSFET N-CH 600V 34A TO220 STMicroelectronics |
189 | - |
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数据手册 |
MDmesh™ DM2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STP20N95K5MOSFET N-CH 950V 17.5A TO220-3 STMicroelectronics |
886 | - |
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数据手册 |
SuperMESH5™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STP40N60M2MOSFET N-CH 600V 34A TO220 STMicroelectronics |
1,986 | - |
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数据手册 |
MDmesh™ II Plus | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW48N60DM2MOSFET N-CH 600V 40A TO247 STMicroelectronics |
801 | - |
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数据手册 |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 79mOhm @ 20A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±25V | 3250 pF @ 100 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW10NK80ZMOSFET N-CH 800V 9A TO247-3 STMicroelectronics |
603 | - |
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数据手册 |
SuperMESH™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9A (Tc) | 10V | 900mOhm @ 4.5A, 10V | 4.5V @ 100µA | 72 nC @ 10 V | ±30V | 2180 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
