电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW60NM50NMOSFET N-CH 500V 68A TO247 STMicroelectronics |
9,105 | - |
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数据手册 |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 68A (Tc) | 10V | 43mOhm @ 34A, 10V | 4V @ 250µA | 178 nC @ 10 V | ±25V | 5790 pF @ 100 V | - | 446W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW55NM60NDMOSFET N-CH 600V 51A TO247-3 STMicroelectronics |
3,647 | - |
|
数据手册 |
FDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 60mOhm @ 25.5A, 10V | 5V @ 250µA | 190 nC @ 10 V | ±25V | 5800 pF @ 50 V | - | 350W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW54NM65NDMOSFET N-CH 650V 49A TO247-3 STMicroelectronics |
4,154 | - |
|
数据手册 |
FDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 49A (Tc) | 10V | 65mOhm @ 24.5A, 10V | 5V @ 250µA | 188 nC @ 10 V | ±25V | 6200 pF @ 50 V | - | 350W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SCT040W120G3-4AGTO247-4 STMicroelectronics |
2,119 | - |
|
数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 56 nC @ 18 V | +22V, -10V | 1329 pF @ 800 V | - | 312W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
STWA68N60M6MOSFET N-CH 600V 63A TO247 STMicroelectronics |
3,006 | - |
|
数据手册 |
MDmesh™ M6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 63A (Tc) | 10V | 41mOhm @ 31.5A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4360 pF @ 100 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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SCTH60N120G2-7SICFET N-CH 1200V 60A H2PAK-7 STMicroelectronics |
2,479 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 10V | 5V @ 1mA | 94 nC @ 18 V | +22V, -10V | 1969 pF @ 800 V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
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STE48NM60MOSFET N-CH 650V 48A ISOTOP STMicroelectronics |
5,321 | - |
|
数据手册 |
MDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 48A (Tc) | 10V | 110mOhm @ 22.5A, 10V | 5V @ 250µA | 134 nC @ 10 V | ±30V | 3800 pF @ 25 V | - | 450W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STE30NK90ZMOSFET N-CH 900V 28A ISOTOP STMicroelectronics |
5,554 | - |
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数据手册 |
SuperMESH™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 28A (Tc) | 10V | 260mOhm @ 14A, 10V | 4.5V @ 150µA | 490 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 500W (Tc) | -65°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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SCT011H75G3AGMOSFET 750 V 110A H2PAK7 STMicroelectronics |
4,861 | - |
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数据手册 |
* | - | Cut Tape (CT) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCTWA70N120G2V-4DISCRETE STMicroelectronics |
9,541 | - |
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数据手册 |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 91A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 547W | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247-4 |
