电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STB21NM50N-1MOSFET N-CH 500V 18A I2PAK STMicroelectronics |
9,271 | - |
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数据手册 |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±25V | 1950 pF @ 25 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
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STB35NF10T4MOSFET N-CH 100V 40A D2PAK STMicroelectronics |
9,307 | - |
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数据手册 |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 35mOhm @ 17.5A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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STP21NM50NMOSFET N-CH 500V 18A TO220AB STMicroelectronics |
5,869 | - |
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数据手册 |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±25V | 1950 pF @ 25 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STF14NM65NMOSFET N-CH 650V 12A TO220FP STMicroelectronics |
8,873 | - |
|
数据手册 |
MDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±25V | 1300 pF @ 50 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STP20NM65NMOSFET N-CH 650V 15A TO220 STMicroelectronics |
7,888 | - |
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数据手册 |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 270mOhm @ 7.5A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±25V | 1280 pF @ 50 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW75NF30AGMOSFET N-CH 300V 60A TO247 STMicroelectronics |
4,405 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A | 10V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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STL100N1VH5MOSFET N-CH 12V 100A POWERFLAT STMicroelectronics |
4,878 | - |
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数据手册 |
STripFET™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 100A (Tc) | 2.5V, 4.5V | 3mOhm @ 12.5A, 4.5V | 500mV @ 250µA (Min) | 26.5 nC @ 4.5 V | ±8V | 2085 pF @ 10 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
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STH245N75F3-6MOSFET N-CH 75V 180A H2PAK-6 STMicroelectronics |
6,417 | - |
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数据手册 |
STripFET™ F3 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 180A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 87 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-6 |
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STW11NB80MOSFET N-CH 800V 11A TO247-3 STMicroelectronics |
3,761 | - |
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数据手册 |
PowerMESH™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 800mOhm @ 5.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±30V | 2900 pF @ 25 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STP20NM60AMOSFET N-CH 650V 20A TO220AB STMicroelectronics |
8,197 | - |
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数据手册 |
MDmesh™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1630 pF @ 25 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
