电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STP10NM65NMOSFET N-CH 650V 9A TO220AB STMicroelectronics |
4,570 | - |
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数据手册 |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 480mOhm @ 4.5A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STI12NM50NMOSFET N-CH 500V 11A I2PAK STMicroelectronics |
3,505 | - |
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数据手册 |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 940 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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STP13NM50NMOSFET N-CH 500V 12A TO220AB STMicroelectronics |
6,085 | - |
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数据手册 |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 960 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STB200NF04L-1MOSFET N-CH 40V 120A I2PAK STMicroelectronics |
4,649 | - |
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数据手册 |
STripFET™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 5V, 10V | 3.8mOhm @ 50A, 10V | 4V @ 250µA | 90 nC @ 4.5 V | ±16V | 6400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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STB11NM60N-1MOSFET N-CH 600V 10A I2PAK STMicroelectronics |
4,786 | - |
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数据手册 |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
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STI11NM60NDMOSFET N-CH 600V 10A I2PAK STMicroelectronics |
7,985 | - |
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数据手册 |
FDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
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STP200NF04MOSFET N-CH 40V 120A TO220AB STMicroelectronics |
4,512 | - |
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数据手册 |
STripFET™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.7mOhm @ 90A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 5100 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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STP75N20MOSFET N-CH 200V 75A TO220AB STMicroelectronics |
9,375 | - |
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数据手册 |
STripFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 75A (Tc) | 10V | 34mOhm @ 37A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±20V | 3260 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STF10NM65NMOSFET N-CH 650V 9A TO220FP STMicroelectronics |
7,338 | - |
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数据手册 |
MDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 480mOhm @ 4.5A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 25W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STF13NM60N-HMOSFET N-CH 600V 11A TO220FP STMicroelectronics |
6,568 | - |
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数据手册 |
MDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | - | 25W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
