电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S3M0025120KMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
240 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S2M0016120D-1MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0016120K-1MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
147 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S3M0016120BMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 106A (Tc) | 18V | 23mOhm @ 75A, 18V | 4V @ 30mA | 287 nC @ 18 V | +22V, -8V | 5251 pF @ 1000 V | - | 576W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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S2M0160120TMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S2M0120120TMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S2M0080120TMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
300 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S3M0040120TMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
250 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
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S2M0040120J-1MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
510 | - |
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数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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S3M0025120TMOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions |
200 | - |
|
数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
