| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJD100N04_L2_0000140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,909 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 4.5 V | ±20V | 5214 pF @ 25 V | - | 2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJD4NA90_L2_00001900V N-CHANNEL MOSFET Panjit International Inc. |
2,175 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 4A (Ta) | 10V | 3.4Ohm @ 2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 710 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJD5NA80_L2_00001800V N-CHANNEL MOSFET Panjit International Inc. |
7,268 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Ta) | 10V | 2.7Ohm @ 2.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 660 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJD40N15_L2_00001150V N-CHANNEL ENHANCEMENT MODE Panjit International Inc. |
8,902 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 40A (Tc) | 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±20V | 2207 pF @ 75 V | - | 2W (Ta), 131W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJQ5494_R2_00001150V N-CHANNEL ENHANCEMENT MODE Panjit International Inc. |
7,892 | - |
|
数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 40A (Tc) | 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±20V | 2207 pF @ 75 V | - | 2W (Ta), 131W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5060-8 |
|
PJD100N04-AU_L2_000A140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
6,194 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 4.5 V | ±20V | 5214 pF @ 25 V | - | 2.4W (Ta), 83.3W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
|
PSMB055N08NS1_R2_0060180V/ 5.5MOHM / MV MOSFET Panjit International Inc. |
2,093 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 108A (Tc) | 7V, 10V | 5.5mOhm @ 50A, 10V | 3.75V @ 250µA | 48 nC @ 7 V | ±20V | 4773 pF @ 40 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
PJMB130N65EC_R2_00601650V/ 130MOHM / 29A/ EASY TO DRI Panjit International Inc. |
7,877 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 130mOhm @ 10.8A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±30V | 1920 pF @ 400 V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
PJP6NA90_T0_00001900V N-CHANNEL MOSFET Panjit International Inc. |
8,995 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 6A (Ta) | 10V | 2.3Ohm @ 3A, 10V | 4V @ 250µA | 23.6 nC @ 10 V | ±30V | 915 pF @ 25 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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PJP100P03_T0_0000130V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
8,758 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 15.8A (Ta), 100A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.5V @ 250µA | 107 nC @ 10 V | ±20V | 6067 pF @ 25 V | - | 2W (Ta), 119W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |

