上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN1R7-60BS,118MOSFET N-CH 60V 120A D2PAK Nexperia USA Inc. |
4,895 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2mOhm @ 25A, 10V | 4V @ 1mA | 137 nC @ 10 V | ±20V | 9997 pF @ 30 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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PSMN3R8-100BS,118MOSFET N-CH 100V 120A D2PAK Nexperia USA Inc. |
16,235 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 25A, 10V | 4V @ 1mA | 170 nC @ 10 V | ±20V | 9900 pF @ 50 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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BUK964R2-80E,118MOSFET N-CH 80V 120A D2PAK Nexperia USA Inc. |
5,004 | - |
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数据手册 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 5V | 4mOhm @ 25A, 10V | 2.1V @ 1mA | 123 nC @ 5 V | ±10V | 17130 pF @ 25 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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PSMNR90-40YLHXMOSFET N-CH 40V 300A LFPAK56 Nexperia USA Inc. |
5,034 | - |
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数据手册 |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 4.5V, 10V | 0.94mOhm @ 25A, 10V | 2.05V @ 1mA | 168 nC @ 10 V | ±20V | 12673 pF @ 20 V | Schottky Diode (Body) | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56; Power-SO8 |
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BUK962R5-60E,118MOSFET N-CH 60V 120A D2PAK Nexperia USA Inc. |
2,942 | - |
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数据手册 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 5V | 2.5mOhm @ 25A, 5V | 2.1V @ 1mA | 120 nC @ 5 V | ±10V | 17450 pF @ 25 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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BUK7S1R0-40HJMOSFET N-CH 40V 325A LFPAK88 Nexperia USA Inc. |
1,978 | - |
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数据手册 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 325A (Tc) | 10V | 1mOhm @ 25A, 10V | 3.6V @ 1mA | 137 nC @ 10 V | +20V, -10V | 10322 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK88 (SOT1235) |
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PSMNR55-40SSHJPSMNR55-40SSH/SOT1235/LFPAK88 Nexperia USA Inc. |
5,446 | - |
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数据手册 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 500A (Tc) | 10V | 0.55mOhm @ 25A, 10V | 3.6V @ 1mA | 267 nC @ 10 V | ±20V | 21162 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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PSMNR90-50SLHAXPSMNR90-50SLH/SOT1235/LFPAK88 Nexperia USA Inc. |
3,871 | - |
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数据手册 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 410A (Tc) | 4.5V, 10V | 0.9mOhm @ 25A, 10V | 2.2V @ 1mA | 383 nC @ 10 V | ±20V | 25001 pF @ 25 V | Schottky Diode (Isolated) | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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PSMN1R2-55SLHXN-CHANNEL 55 V, 1.03 MOHM, 330 A Nexperia USA Inc. |
1,651 | - |
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数据手册 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 330A (Tc) | 4.5V, 10V | 1.03mOhm @ 25A, 10V | 2.2V @ 1mA | 395 nC @ 10 V | ±20V | 25773 pF @ 27 V | Schottky Diode (Isolated) | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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GAN063-650WSAQGANFET N-CH 650V 34.5A TO247-3 Nexperia USA Inc. |
547 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 34.5A (Tc) | 10V | 60mOhm @ 25A, 10V | 4.5V @ 1mA | 15 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
