电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SICW080N120Y-BPMOSFET N-CH 1200V 38A TO247-3 Micro Commercial Co |
3,510 | - |
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数据手册 |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 38A | 18V | 85mOhm @ 20A, 18V | 3.6V @ 5mA | 41 nC @ 18 V | +22V, -8V | 890 pF @ 1000 V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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SICW040N120Y-BPMOSFET N-CH 1200V 63A TO247AB Micro Commercial Co |
9,293 | - |
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数据手册 |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 3.5V @ 10mA | 120 nC @ 20 V | +25V, -10V | 2225 pF @ 1000 V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW040N120Y4-BPMOSFET N-CH 1200V 63A TO247-4 Micro Commercial Co |
5,092 | - |
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数据手册 |
- | TO-247-4 | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 3.5V @ 10mA | 120 nC @ 20 V | +25V, -10V | 2225 pF @ 1000 V | - | 390W | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SICW021N120P-BPSIC MOSFET,TO-247AB Micro Commercial Co |
2,051 | - |
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数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 29.4mOhm @ 50A, 18V | 4.5V @ 17mA | 200 nC @ 18 V | +22V, -10V | 3741 pF @ 800 V | - | 469W | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW021N120P4-BPSIC MOSFET,TO-247-4L Micro Commercial Co |
4,270 | - |
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数据手册 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 29.4mOhm @ 50A, 18V | 4.5V @ 17mA | 200 nC @ 18 V | +18V, -5V | 3741 pF @ 800 V | - | 469W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MCM1206-TPMOSFET P-CH 12V 6A DFN2020-6J Micro Commercial Co |
5,350 | - |
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数据手册 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 45mOhm @ 3.5A, 4.5V | 900mV @ 250µA | 7.8 nC @ 4.5 V | ±8V | 740 pF @ 4 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN2020-6J |
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SI3134KL-TPN-CHANNEL MOSFET, SOT-883 PACKAG Micro Commercial Co |
4,923 | - |
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数据手册 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | - | - | - | 750mA (Tj) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-883 |
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SI3139KL-TPMOSFET P-CH 20V 680MA SOT883 Micro Commercial Co |
3,566 | - |
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数据手册 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 680mA (Tj) | 4.5V | 700mOhm @ 600mA, 4.5V | 1.1V @ 250µA | - | ±12V | 170 pF @ 6 V | - | 100mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-883 |
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MCU04N60-TPMOSFET N-CH 600V 4A DPAK Micro Commercial Co |
9,510 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 3Ohm @ 2A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±30V | 760 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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2N7000-APMOSFET N-CH 60V 200MA TO92 Micro Commercial Co |
3,899 | - |
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数据手册 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 220mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 60 pF @ 25 V | - | 625mW (Ta) | -55°C ~ 150°C | - | - | Through Hole | TO-92 |
