电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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AUIRF1405MOSFET N-CH 55V 75A TO220AB International Rectifier |
950 | - |
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数据手册 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRFSL3206AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
250 | - |
|
数据手册 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | - | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | - | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRL1404SPFET, 160A I(D), 40V, 0.004OHM, International Rectifier |
2,225 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140 nC @ 5 V | ±20V | 6600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRF3808AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
1,792 | - |
|
数据手册 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 140A (Tc) | - | 7mOhm @ 82A, 10V | 4V @ 250µA | 220 nC @ 10 V | - | 5310 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF2805AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
1,300 | - |
|
数据手册 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF6641TRPBFIRF6641 - 12V-300V N-CHANNEL POW International Rectifier |
420 | - |
|
数据手册 |
HEXFET® | DirectFET™ Isometric MZ | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Ta), 26A (Tc) | 10V | 59.9mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48 nC @ 10 V | ±20V | 2290 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
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AUIRFS3607MOSFET N-CH 75V 80A D2PAK International Rectifier |
408 | - |
|
数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFF9221MOSFET N-CH 150V 2.5A TO205AF International Rectifier |
194 | - |
|
数据手册 |
HEXFET® | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2.5A (Tc) | - | - | - | - | - | - | - | 20W | - | - | - | Through Hole | TO-205AF (TO-39) |
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AUIRF1324SMOSFET N-CH 24V 195A D2PAK International Rectifier |
6,266 | - |
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数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF9233MOSFET P-CH 150V 5.5A TO204AE International Rectifier |
301 | - |
|
数据手册 |
HEXFET® | TO-204AE | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 5.5A | - | - | - | - | - | - | - | 75W | - | - | - | Through Hole | TO-204AE |
