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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF40B207MOSFET N-CH 40V 95A TO220AB Infineon Technologies |
1,841 | - |
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数据手册 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 6V, 10V | 4.5mOhm @ 57A, 10V | 3.9V @ 50µA | 68 nC @ 10 V | ±20V | 2110 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPD50P03P4L11ATMA2MOSFET P-CH 30V 50A TO252-31 Infineon Technologies |
19,021 | - |
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数据手册 |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | - | 10.5mOhm @ 50A, 10V | 2V @ 85µA | 55 nC @ 10 V | +5V, -16V | 3770 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IPA65R1K0CEXKSA1MOSFET N-CH 650V 7.2A TO220 Infineon Technologies |
1,456 | - |
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数据手册 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPD040N03LGATMA1MOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
186 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD050N03LGATMA1MOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
3,430 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 68W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD50N06S409ATMA2MOSFET N-CH 60V 50A TO252-31 Infineon Technologies |
250 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 47.1 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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ISZ56DP15LMATMA1TRENCH >=100V Infineon Technologies |
9,850 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 1.35A (Ta), 6.7A (Tc) | 4.5V, 10V | 560mOhm @ 5A, 10V | 2V @ 724µA | 40 nC @ 10 V | ±20V | 1400 pF @ 75 V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
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IPD135N08N3GATMA1MOSFET N-CH 80V 45A TO252-3 Infineon Technologies |
11,914 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A (Tc) | 6V, 10V | 13.5mOhm @ 45A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD50N08S413ATMA1MOSFET N-CH 80V 50A TO252-3 Infineon Technologies |
4,138 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 10V | 13.2mOhm @ 50A, 10V | 4V @ 33µA | 30 nC @ 10 V | ±20V | 1711 pF @ 25 V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IRFH8311TRPBFMOSFET N CH 30V 32A PQFN5X6 Infineon Technologies |
42,714 | - |
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数据手册 |
HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 169A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.35V @ 100µA | 66 nC @ 10 V | ±20V | 4960 pF @ 10 V | - | 3.6W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
