| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH7182TRPBFMOSFET N-CH 100V 23A/157A 8PQFN Infineon Technologies |
3,024 | - |
|
数据手册 |
FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Ta), 157A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 250µA | 74 nC @ 10 V | ±20V | 3120 pF @ 50 V | - | 4W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
|
AUIRFP4310ZMOSFET N-CH 100V 128A TO247AC Infineon Technologies |
9,029 | - |
|
数据手册 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 128A (Tc) | 10V | 6mOhm @ 77A, 10V | 4V @ 150µA | 188 nC @ 10 V | ±20V | 7120 pF @ 50 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
AUIRFS4127MOSFET N-CH 200V 72A D2PAK Infineon Technologies |
2,072 | - |
|
数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
AUIRFSA8409-7PMOSFET N-CH 40V 523A D2PAK Infineon Technologies |
5,276 | - |
|
数据手册 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 523A (Tc) | 10V | 0.69mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
AUIRLS8409-7PMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
2,164 | - |
|
数据手册 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 4.5V, 10V | 0.75mOhm @ 100A, 10V | 2.4V @ 250µA | 266 nC @ 4.5 V | ±16V | 16488 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
AUIRLU3114ZMOSFET N-CH 40V 130A TO251-3 Infineon Technologies |
8,991 | - |
|
数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
|
62-0095PBFMOSFET N-CH 20V 10A/12A 8SOIC Infineon Technologies |
9,346 | - |
|
数据手册 |
- | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta), 12A (Tc) | 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11 nC @ 4.5 V | - | 900 pF @ 10 V | - | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
62-0136PBFMOSFET N-CH 30V 19A 8-SOIC Infineon Technologies |
7,341 | - |
|
数据手册 |
- | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta) | 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44 nC @ 4.5 V | ±20V | 3710 pF @ 15 V | - | 2.5W | -55°C ~ 150°C (TA) | - | - | Surface Mount | - |
|
62-0218PBFMOSFET P-CH 30V 9.2A 8-SO Infineon Technologies |
6,666 | - |
|
数据手册 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
62-0258PBFMOSFET P-CH 30V 9.2A 8-SO Infineon Technologies |
9,309 | - |
|
数据手册 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |

