| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFHM8228TRPBFMOSFET N-CH 25V 19A 8PQFN Infineon Technologies |
9,060 | - |
|
数据手册 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.35V @ 25µA | 18 nC @ 10 V | ±20V | 1667 pF @ 10 V | - | 2.8W (Ta), 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
|
IPP50R399CPXKSA1MOSFET N-CH 500V 9A TO220-3 Infineon Technologies |
9,975 | - |
|
数据手册 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Ta) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 4 nC @ 10 V | ±20V | 890 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRFS7530-7PPBFMOSFET N CH 60V 240A D2PAK Infineon Technologies |
8,120 | - |
|
数据手册 |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354 nC @ 10 V | ±20V | 12960 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRFS7530PBFMOSFET N-CH 60V 195A D2PAK Infineon Technologies |
2,496 | - |
|
数据手册 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFS7534-7PPBFMOSFET N CH 60V 240A D2PAK Infineon Technologies |
2,122 | - |
|
数据手册 |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300 nC @ 10 V | ±20V | 9990 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRFS7534PBFMOSFET N CH 60V 195A D2PAK Infineon Technologies |
9,123 | - |
|
数据手册 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279 nC @ 10 V | ±20V | 10034 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFS7537PBFMOSFET N CH 60V 173A D2PAK Infineon Technologies |
5,248 | - |
|
数据手册 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFS7540PBFMOSFET N CH 60V 110A D2PAK Infineon Technologies |
4,870 | - |
|
数据手册 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
AUIRFS4115-7PMOSFET N-CH 150V 105A D2PAK Infineon Technologies |
9,848 | - |
|
数据手册 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
AUIRFS4115-7TRLMOSFET N-CH 150V 105A D2PAK Infineon Technologies |
9,394 | - |
|
数据手册 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |

