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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPB45N04S4L08ATMA1MOSFET N-CH 40V 45A TO263-3-2 Infineon Technologies |
2,568 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 4.5V, 10V | 7.6mOhm @ 45A, 10V | 2.2V @ 17µA | 30 nC @ 10 V | +20V, -16V | 2340 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB65R660CFDATMA1MOSFET N-CH 650V 6A D2PAK Infineon Technologies |
9,814 | - |
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数据手册 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPD100N06S403ATMA1MOSFET N-CH 60V 100A TO252-3-11 Infineon Technologies |
7,368 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD50N06S4L12ATMA1MOSFET N-CH 60V 50A TO252-3-11 Infineon Technologies |
5,397 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | 2.2V @ 20µA | 40 nC @ 10 V | ±16V | 2890 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD65R660CFDBTMA1MOSFET N-CH 650V 6A TO252-3 Infineon Technologies |
2,884 | - |
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数据手册 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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BSB012NE2LXMOSFET N-CH 25V 37A/170A 2WDSON Infineon Technologies |
4,230 | - |
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数据手册 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 37A (Ta), 170A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2V @ 250µA | 67 nC @ 10 V | ±20V | 4900 pF @ 12 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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BSS84PH6327XTSA1MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies |
2,496 | - |
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数据手册 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5 nC @ 10 V | ±20V | 19 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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SN7002NH6327XTSA1MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
5,790 | - |
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数据手册 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT23 |
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BUZ30AHXKSA1MOSFET N-CH 200V 21A TO220-3 Infineon Technologies |
3,465 | - |
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数据手册 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | 4V @ 1mA | - | ±20V | 1900 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BUZ31L HMOSFET N-CH 200V 13.5A TO220-3 Infineon Technologies |
5,954 | - |
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数据手册 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
