电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPI80P03P4L04AKSA1MOSFET P-CH 30V 80A TO262-3 Infineon Technologies |
9,980 | - |
|
数据手册 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPI80P03P4L07AKSA1MOSFET P-CH 30V 80A TO262-3 Infineon Technologies |
8,499 | - |
|
数据手册 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPP065N04N GMOSFET N-CH 40V 50A TO220-3 Infineon Technologies |
2,554 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 6.5mOhm @ 50A, 10V | 4V @ 200µA | 34 nC @ 10 V | ±20V | 2800 pF @ 20 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP120N06S4H1AKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
9,274 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270 nC @ 10 V | ±20V | 21900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80N04S3H4AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
4,711 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 4V @ 65µA | 60 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80N06S405AKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
9,731 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80N06S407AKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
8,525 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80P03P4L04AKSA1MOSFET P-CH 30V 80A TO220-3 Infineon Technologies |
3,432 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP80P03P4L07AKSA1MOSFET P-CH 30V 80A TO220-3 Infineon Technologies |
5,586 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IPP90N06S4L04AKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
7,632 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
