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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD082N10N3GBTMA1MOSFET N-CH 100V 80A TO252-3 Infineon Technologies |
9,753 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 8.2mOhm @ 73A, 10V | 3.5V @ 75µA | 55 nC @ 10 V | ±20V | 3980 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD088N04LGBTMA1MOSFET N-CH 40V 50A TO252-3 Infineon Technologies |
5,149 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 50A, 10V | 2V @ 16µA | 28 nC @ 10 V | ±20V | 2100 pF @ 20 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD096N08N3GBTMA1MOSFET N-CH 80V 73A TO252-3 Infineon Technologies |
2,488 | - |
|
数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 73A (Tc) | 6V, 10V | 9.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35 nC @ 10 V | ±20V | 2410 pF @ 40 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD105N04LGBTMA1MOSFET N-CH 40V 40A TO252-3 Infineon Technologies |
2,992 | - |
|
数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 10.5mOhm @ 40A, 10V | 2V @ 14µA | 23 nC @ 10 V | ±20V | 1900 pF @ 20 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD12CN10NGBUMA1MOSFET N-CH 100V 67A TO252-3 Infineon Technologies |
5,497 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4320 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD135N08N3GBTMA1MOSFET N-CH 80V 45A TO252-3 Infineon Technologies |
8,508 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A (Tc) | 6V, 10V | 13.5mOhm @ 45A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD14N06S280ATMA1MOSFET N-CH 55V 17A TO252-3 Infineon Technologies |
8,053 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10 nC @ 10 V | ±20V | 293 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD160N04LGBTMA1MOSFET N-CH 40V 30A TO252-3 Infineon Technologies |
4,739 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 4.5V, 10V | 16mOhm @ 30A, 10V | 2V @ 10µA | 15 nC @ 10 V | ±20V | 1200 pF @ 20 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD170N04NGBTMA1MOSFET N-CH 40V 30A TO252-3 Infineon Technologies |
5,536 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 10V | 17mOhm @ 30A, 10V | 4V @ 10µA | 11 nC @ 10 V | ±20V | 880 pF @ 20 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD250N06N3GBTMA1MOSFET N-CH 60V 28A TO252-3 Infineon Technologies |
3,463 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Tc) | 10V | 25mOhm @ 28A, 10V | 4V @ 11µA | 15 nC @ 10 V | ±20V | 1200 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
