电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFS41N15DPBFMOSFET N-CH 150V 41A D2PAK Infineon Technologies |
9,382 | - |
|
数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110 nC @ 10 V | ±30V | 2520 pF @ 25 V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRLR3103PBFMOSFET N-CH 30V 55A DPAK Infineon Technologies |
3,953 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50 nC @ 4.5 V | ±16V | 1600 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRL3705ZSPBFMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
5,620 | - |
|
数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRLL024NPBFMOSFET N-CH 55V 3.1A SOT223 Infineon Technologies |
6,241 | - |
|
数据手册 |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6 nC @ 5 V | ±16V | 510 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
|
IRL530NSPBFMOSFET N-CH 100V 17A D2PAK Infineon Technologies |
4,346 | - |
|
数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±20V | 800 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRLR3714PBFMOSFET N-CH 20V 36A DPAK Infineon Technologies |
9,008 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7 nC @ 4.5 V | ±20V | 670 pF @ 10 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRLR3105PBFMOSFET N-CH 55V 25A DPAK Infineon Technologies |
6,002 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±16V | 710 pF @ 25 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRL3714LPBFMOSFET N-CH 20V 36A TO262 Infineon Technologies |
8,986 | - |
|
数据手册 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7 nC @ 4.5 V | ±20V | 670 pF @ 10 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRLU014NPBFMOSFET N-CH 55V 10A I-PAK Infineon Technologies |
8,926 | - |
|
数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9 nC @ 5 V | ±16V | 265 pF @ 25 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRL3102PBFMOSFET N-CH 20V 61A TO220AB Infineon Technologies |
7,673 | - |
|
数据手册 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA (Min) | 58 nC @ 4.5 V | ±10V | 2500 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
