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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GS66506T-TRGS66506T-TR Infineon Technologies Canada Inc. |
6,500 | - |
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数据手册 |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 22.5A (Tc) | 6V | 90mOhm @ 6.7A, 6V | 1.3V @ 5mA | 4.4 nC @ 6 V | +7V, -10V | 195 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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IRLMS2002TRMOSFET N-CH 20V 6.5A 6-TSOP Infineon Technologies |
9,092 | - |
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数据手册 |
- | SOT-23-6 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | - | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | - | 1310 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro6™(SOT23-6) |
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IRFPS3810MOSFET N-CH 100V 170A SUPER247 Infineon Technologies |
8,797 | - |
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数据手册 |
HEXFET® | TO-274AA | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 250µA | 390 nC @ 10 V | ±30V | 6790 pF @ 25 V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
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AUIRFS8407-7PMOSFET N-CH 40V 240A D2PAK-7 Infineon Technologies |
1,039 | - |
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数据手册 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7437 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
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BTS121AE3045ANTMA1MOSFET N CH 100V 22A TO-220AB Infineon Technologies |
3,257 | - |
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数据手册 |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V | 100mOhm @ 9.5A, 4.5V | 2.5V @ 1mA | - | ±10V | 1500 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO220-3-5 |
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IPQC65R017CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
4,962 | - |
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数据手册 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 136A (Tc) | 10V | 17mOhm @ 61.6A, 10V | 4.5V @ 3.08mA | 236 nC @ 10 V | ±20V | 12338 pF @ 400 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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AIMZHN120R030M1TXKSA1SIC_DISCRETE Infineon Technologies |
5,219 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 69A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +23V, -5V | 1738 pF @ 800 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
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IMSQ120R040M2HHXUMA1SIC DISCRETE Infineon Technologies |
8,621 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF7601TRMOSFET N-CH 20V 5.7A MICRO8 Infineon Technologies |
5,446 | - |
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数据手册 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | - | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | - | 650 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro8™ |
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IPW65R041CFDFKSA1MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies |
9,056 | - |
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数据手册 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
