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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPQC65R040CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
3,483 | - |
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数据手册 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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GS-065-030-6-LL-TRGAN POWER TRANSISTOR Infineon Technologies Canada Inc. |
2,596 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 40A (Tc) | 6V | 58mOhm @ 5.5A, 6V | 2.6V @ 7.5mA | 6.7 nC @ 6 V | +7V, -10V | 235 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL |
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ISC025N08NM5LFATMA1OPTIMOSTM5LINEARFET80V Infineon Technologies |
3,940 | - |
|
数据手册 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 23A (Ta), 198A (Tc) | 10V | 2.55mOhm @ 50A, 10V | 3.9V @ 115µA | 96 nC @ 10 V | ±20V | 6800 pF @ 40 V | - | 3W (Ta), 217W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IRF6635TRPBFMOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
6,747 | - |
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数据手册 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71 nC @ 4.5 V | ±20V | 5970 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRF7779L2TR1PBFMOSFET N-CH 150V 375A DIRECTFET Infineon Technologies |
9,239 | - |
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数据手册 |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 375A (Tc) | 10V | 11mOhm @ 40A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 6660 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
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AUIRF8736M2TRMOSFET N-CH 40V 27A DIRECTFET Infineon Technologies |
9,970 | - |
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数据手册 |
HEXFET® | DirectFET™ Isometric M4 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 137A (Tc) | 10V | 1.9mOhm @ 85A, 10V | 3.9V @ 150µA | 204 nC @ 10 V | ±20V | 6867 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M4 |
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IRLML2402TRMOSFET N-CH 20V 1.2A SOT-23 Infineon Technologies |
6,863 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 2.7V, 4.5V | 250mOhm @ 930mA, 4.5V | 700mV @ 250µA (Min) | 3.9 nC @ 4.5 V | ±12V | 110 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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IRFI530NMOSFET N-CH 100V 12A TO220AB FP Infineon Technologies |
9,263 | - |
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数据手册 |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 110mOhm @ 6.6A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRLL3303MOSFET N-CH 30V 4.6A SOT223 Infineon Technologies |
6,006 | - |
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数据手册 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50 nC @ 10 V | ±16V | 840 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRF7739L2TRPBFMOSFET N-CH 40V 46A DIRECTFET Infineon Technologies |
8,240 | - |
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数据手册 |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 375A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 11880 pF @ 25 V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
