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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPC302N10N3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
2,034 | - |
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数据手册 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 302µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IPD03N03LB GMOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
7,923 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 60A, 10V | 2V @ 70µA | 40 nC @ 5 V | ±20V | 5200 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPB60R280C6ATMA1MOSFET N-CH 600V 13.8A D2PAK Infineon Technologies |
2,143 | - |
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数据手册 |
CoolMOS™ C6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPC302N08N3X1SA1MOSFET N-CH 80V 1A SAWN ON FOIL Infineon Technologies |
5,918 | - |
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数据手册 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IRFP150MPBFMOSFET N-CH 100V 42A TO247AC Infineon Technologies |
1,042 | - |
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数据手册 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRL2505STRLPBFMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
7,962 | - |
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数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF3805STRLMOSFET N-CH 55V 160A D2PAK Infineon Technologies |
8,802 | - |
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数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | - | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | - | 7960 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF6717MTR1PBFMOSFET N-CH 25V 38A DIRECTFET Infineon Technologies |
3,937 | - |
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数据手册 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.25mOhm @ 38A, 10V | 2.35V @ 150µA | 69 nC @ 4.5 V | ±20V | 6750 pF @ 13 V | - | 2.8W (Ta), 96W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRLR7843CTRPBFMOSFET N-CH 30V 161A DPAK Infineon Technologies |
4,939 | - |
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数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFH7885TRPBFMOSFET N-CH 80V 22A 8PQFN Infineon Technologies |
4,243 | - |
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数据手册 |
FASTIRFET™ | 8-VQFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 150µA | 54 nC @ 10 V | ±20V | 2311 pF @ 40 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
