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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP4127PBFAKMA1TRENCH >=100V Infineon Technologies |
4,212 | - |
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数据手册 |
- | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 75A (Tc) | 10V | 21mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPP030N10N3GHKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
7,231 | - |
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数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRFB3507MOSFET N-CH 75V 97A TO220AB Infineon Technologies |
7,826 | - |
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数据手册 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130 nC @ 10 V | ±20V | 3540 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPI05CN10N GMOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
2,220 | - |
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数据手册 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.4mOhm @ 100A, 10V | 4V @ 250µA | 181 nC @ 10 V | ±20V | 12000 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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SPP24N60C3HKSA1MOSFET N-CH 650V 24.3A TO220-3 Infineon Technologies |
7,444 | - |
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数据手册 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPD35N10MOSFET N-CH 100V 35A TO252-3 Infineon Technologies |
6,360 | - |
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数据手册 |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | - | 65 nC @ 10 V | ±20V | 1570 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPC218N06N3X7SA1MV POWER MOS Infineon Technologies |
9,691 | - |
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数据手册 |
OptiMOS™ 3 | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | - | 10V | 100mOhm @ 2A, 10V | 4V @ 196µA | - | - | - | - | - | - | - | - | Surface Mount | Die |
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IPC218N06N3X1SA2MOSFET N-CH 60V 3A SAWN ON FOIL Infineon Technologies |
3,773 | - |
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数据手册 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 196µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IRL3502MOSFET N-CH 20V 110A TO220AB Infineon Technologies |
3,729 | - |
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数据手册 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA (Min) | 110 nC @ 4.5 V | ±10V | 4700 pF @ 15 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFS4610MOSFET N-CH 100V 73A D2PAK Infineon Technologies |
6,874 | - |
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数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
