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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPP100N04S2L-03MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
7,414 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BSO203SPHXUMA1MOSFET P-CH 20V 7A 8DSO Infineon Technologies |
3,369 | - |
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数据手册 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 2.5V, 4.5V | 21mOhm @ 8.9A, 4.5V | 1.2V @ 100µA | 39 nC @ 4.5 V | ±12V | 3750 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IPB65R420CFDATMA1MOSFET N-CH 650V 8.7A D2PAK Infineon Technologies |
7,994 | - |
|
数据手册 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRLR7833CPBFMOSFET N-CH 30V 140A DPAK Infineon Technologies |
8,318 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Ta) | 4.5V, 10V | - | - | - | ±20V | - | - | 140W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
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SPB80N04S2-04MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
5,951 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 6980 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRF1405LPBFMOSFET N-CH 55V 131A TO262 Infineon Technologies |
2,801 | - |
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数据手册 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRLZ44ZSMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
3,508 | - |
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数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36 nC @ 5 V | ±16V | 1620 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRLZ44ZLMOSFET N-CH 55V 51A TO262 Infineon Technologies |
3,602 | - |
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数据手册 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36 nC @ 5 V | ±16V | 1620 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF7703TRMOSFET P-CH 40V 6A 8TSSOP Infineon Technologies |
3,542 | - |
|
数据手册 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 6A, 10V | 3V @ 250µA | 62 nC @ 4.5 V | ±20V | 5220 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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IPA60R165CPXKSA1MOSFET N-CH 600V 21A TO220-FP Infineon Technologies |
8,658 | - |
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数据手册 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 660µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
