电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPA60R380C6XKSA1MOSFET N-CH 600V 10.6A TO220-FP Infineon Technologies |
484 | - |
|
数据手册 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPD90N08S405ATMA1MOSFET N-CH 80V 90A TO252-3 Infineon Technologies |
6,942 | - |
|
数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 90A (Tc) | 10V | 5.3mOhm @ 90A, 10V | 4V @ 90µA | 68 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
|
IPP114N12N3GXKSA1MOSFET N-CH 120V 75A TO220-3 Infineon Technologies |
406 | - |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 75A (Tc) | 10V | 11.4mOhm @ 75A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4310 pF @ 60 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPB050N10NF2SATMA1TRENCH >=100V Infineon Technologies |
727 | - |
|
数据手册 |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 103A (Tc) | 6V, 10V | 5.05mOhm @ 60A, 10V | 3.8V @ 85µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IAUC120N04S6N010ATMA1MOSFET N-CH 40V 150A TDSON-8-34 Infineon Technologies |
14,844 | - |
|
数据手册 |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 7V, 10V | 1.03mOhm @ 60A, 10V | 3V @ 90µA | 108 nC @ 10 V | ±20V | 6878 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
|
|
IAUC120N04S6L009ATMA1MOSFET N-CH 40V 150A TDSON-8-34 Infineon Technologies |
12,119 | - |
|
数据手册 |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 960mOhm @ 60A, 10V | 2V @ 90µA | 128 nC @ 10 V | ±16V | 7806 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
|
|
IPD60R180P7ATMA1MOSFET N-CH 600V 18A TO252-3 Infineon Technologies |
4,537 | - |
|
数据手册 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPB043N10NF2SATMA1AUTOMOTIVE MOSFET Infineon Technologies |
194 | - |
|
数据手册 |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Ta), 135A (Tc) | 6V, 10V | 4.35mOhm @ 80A, 10V | 3.8V @ 93µA | 85 nC @ 10 V | ±20V | 4000 pF @ 50 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IPD040N08NF2SATMA1MOSFET Infineon Technologies |
3,249 | - |
|
数据手册 |
StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Ta), 129A (Tc) | 6V, 10V | 4mOhm @ 70A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPA040N06NM5SXKSA1MOSFET N-CH 60V 72A TO220 Infineon Technologies |
476 | - |
|
数据手册 |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 72A (Tc) | 6V, 10V | 4mOhm @ 72A, 10V | 3.3V @ 50µA | 50 nC @ 10 V | ±20V | 3500 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
