上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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G3F45MT06L-TR650V 40M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
8,412 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 61A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3F33MT06L-TR650V 27M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
5,791 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 90A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3F25MT06L-TR650V 20M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
8,600 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 125A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3R350MT12JSIC MOSFET N-CH 11A TO263-7 GeneSiC Semiconductor |
6,745 | - |
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数据手册 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA03JT12-247TRANS SJT 1200V 3A TO247AB GeneSiC Semiconductor |
5,546 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA05JT12-263TRANS SJT 1200V 15A D2PAK GeneSiC Semiconductor |
3,277 | - |
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数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA05JT12-247TRANS SJT 1200V 5A TO247AB GeneSiC Semiconductor |
6,647 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA06JT12-247TRANS SJT 1200V 6A TO247AB GeneSiC Semiconductor |
3,911 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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G3R160MT17JSIC MOSFET N-CH 18A TO263-7 GeneSiC Semiconductor |
6,975 | - |
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数据手册 |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 18A (Tc) | 15V | 224mOhm @ 10A, 15V | 2.7V @ 5mA | 29 nC @ 15 V | ±15V | 854 pF @ 1000 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3R75MT12JSIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor |
3,334 | - |
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数据手册 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
