场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTM120H29FG

APTM120H29FG

MOSFET 4N-CH 1200V 34A SP6

Microchip Technology

8,924
APTM120H29FG

数据手册

POWER MOS 7® SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM100TA35SCTPG

APTM100TA35SCTPG

MOSFET 6N-CH 1000V 22A SP6-P

Microchip Technology

8,239
APTM100TA35SCTPG

数据手册

POWER MOS 7® Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
CAS100H12AM1

CAS100H12AM1

MOSFET 2N-CH 1200V 168A MODULE

Wolfspeed, Inc.

4,424
CAS100H12AM1

数据手册

Z-FET™ Module Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 168A 20mOhm @ 20A, 20V 3.1V @ 50mA - 9500pF @ 800V 568W - - - Chassis Mount Module
CAS110M12BM2

CAS110M12BM2

SIC 1200V 110A

Wolfspeed, Inc.

3,405
CAS110M12BM2

数据手册

- Module Bulk Not For New Designs Silicon Carbide (SiC) - - 1200V (1.2kV) 110A - - - - - - - - Chassis Mount -
MSCSM120HM16CT3AG

MSCSM120HM16CT3AG

MOSFET 4N-CH 1200V 173A SP3F

Microchip Technology

9,755
MSCSM120HM16CT3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
QJD1210SA1

QJD1210SA1

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

4,557
QJD1210SA1

数据手册

- Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 520W -40°C ~ 150°C (TJ) - - Chassis Mount Module
QJD1210SB1

QJD1210SB1

SIC 1200V 10A MOD

Powerex Inc.

7,524
QJD1210SB1

数据手册

* - Bulk Discontinued at Digi-Key Silicon Carbide (SiC) - - - - - - - - - - - - - -
APTC60TAM21SCTPAG

APTC60TAM21SCTPAG

MOSFET 6N-CH 600V 116A SP6-P

Microchip Technology

5,946
APTC60TAM21SCTPAG

数据手册

CoolMOS™ Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 116A 21mOhm @ 88A, 10V 3.6V @ 6mA 580nC @ 10V 13000pF @ 100V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
CCS050M12CM2

CCS050M12CM2

MOSFET 6N-CH 1200V 87A MODULE

Wolfspeed, Inc.

5,161
CCS050M12CM2

数据手册

Z-FET™ Z-Rec™ Module Bulk Obsolete Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 87A (Tc) 34mOhm @ 50A, 20V 2.3V @ 2.5mA 180nC @ 20V 2810pF @ 800V 337W 150°C (TJ) - - Chassis Mount Module
WAS110M12BM2

WAS110M12BM2

RF MOSFET 1200V

Wolfspeed, Inc.

5,967
WAS110M12BM2

数据手册

- - Bulk Not For New Designs - - - - - - - - - - - - - - -
QJD1210SA2

QJD1210SA2

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

4,350
QJD1210SA2

数据手册

- Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 415W -40°C ~ 150°C (TJ) - - Chassis Mount Module
APTMC170AM60CT1AG

APTMC170AM60CT1AG

MOSFET 2N-CH 1700V 50A SP1

Microchip Technology

9,853
APTMC170AM60CT1AG

数据手册

- SP1 Bulk Obsolete Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 50A (Tc) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V 350W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
MSCSM70HM05CAG

MSCSM70HM05CAG

SIC MOSFET

Microchip Technology

2,214
MSCSM70HM05CAG

数据手册

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM70TAM10CTPAG

MSCSM70TAM10CTPAG

MOSFET 6N-CH 700V 238A SP6-P

Microchip Technology

3,512
MSCSM70TAM10CTPAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM70AM025CT6AG

MSCSM70AM025CT6AG

MOSFET 700V 538A SP6C

Microchip Technology

8,918
MSCSM70AM025CT6AG

数据手册

- Module Tube Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount SP6C
MSCSM120TAM16CTPAG

MSCSM120TAM16CTPAG

MOSFET 6N-CH 1200V 171A SP6-P

Microchip Technology

8,055
MSCSM120TAM16CTPAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM120HM083CAG

MSCSM120HM083CAG

SIC MOSFET

Microchip Technology

3,522
MSCSM120HM083CAG

数据手册

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM120AM042CT6AG

MSCSM120AM042CT6AG

MOSFET 2N-CH 1200V 495A SP6C

Microchip Technology

7,444
MSCSM120AM042CT6AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70AM025CT6LIAG

MSCSM70AM025CT6LIAG

MOSFET 2N-CH 700V 689A SP6C LI

Microchip Technology

8,656
MSCSM70AM025CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N-Channel - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA (Typ) 1290nC @ 20V 27000pF @ 700V 1882W (Tc) - - - Chassis Mount SP6C LI
QJD1210010

QJD1210010

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

2,949
QJD1210010

数据手册

- Module Bulk Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 1080W -40°C ~ 175°C (TJ) - - Chassis Mount Module
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