场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
GCMX010A120B2B1P

GCMX010A120B2B1P

MOSFET 2N-CH 1200V 214A

SemiQ

4,999
GCMX010A120B2B1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 214A (Tc) 12mOhm @ 100A, 20V 4V @ 40mA 476nC @ 20V 13100pF @ 800V 750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX080A120B2H1P

GCMX080A120B2H1P

MOSFET 4N-CH 1200V 27A

SemiQ

2,668
GCMX080A120B2H1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 27A (Tc) 100mOhm @ 20A, 20V 4V @ 10mA 56nC @ 20V 1362pF @ 800V 119W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX040A120B2H1P

GCMX040A120B2H1P

MOSFET 4N-CH 1200V 56A

SemiQ

4,429
GCMX040A120B2H1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 56A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 121nC @ 20V 3200pF @ 800V 217W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2B1P

GCMX020A120B2B1P

MOSFET 2N-CH 1200V 102A

SemiQ

3,483
GCMX020A120B2B1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 241nC @ 20V 6500pF @ 800V 385W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX040A120B3H1P

GCMX040A120B3H1P

MOSFET 4N-CH 1200V 53A

SemiQ

2,442
GCMX040A120B3H1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2H1P

GCMX020A120B2H1P

MOSFET 4N-CH 1200V 102A

SemiQ

2,415
GCMX020A120B2H1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX010A120B3B1P

GCMX010A120B3B1P

MOSFET 2N-CH 1200V 173A

SemiQ

4,807
GCMX010A120B3B1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B3H1P

GCMX020A120B3H1P

MOSFET 4N-CH 1200V 93A

SemiQ

4,734
GCMX020A120B3H1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX005A120B3B1P

GCMX005A120B3B1P

MOSFET 4N-CH 1200V 383A

SemiQ

1,194
GCMX005A120B3B1P

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) - 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V 23500pF @ 800V 1.154kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX005A120S7B1

GCMX005A120S7B1

MOSFET 2N-CH 1200V 348A

SemiQ

1,334
GCMX005A120S7B1

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V 29300pF @ 800V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
Search

搜索

OEM STOCK

产品

OEM STOCK

电话

OEM STOCK

用户