场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
PMDPB95XNE,115

PMDPB95XNE,115

MOSFET 2N-CH 30V 2.4A 6HUSON

NXP USA Inc.

9,491
PMDPB95XNE,115

数据手册

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 2.4A 120mOhm @ 2A, 4.5V 1.5V @ 250µA 2.5nC @ 4.5V 143pF @ 15V 475mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
PMCXB900UEZ

PMCXB900UEZ

MOSFET N/P-CH 20V 0.6A 6DFN

NXP Semiconductors

1,679,901
PMCXB900UEZ

数据手册

TrenchFET® 6-XFDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate 20V 600mA, 500mA 620mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7nC @ 4.5V 21.3pF @ 10V 265mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
PMDXB1200UPEZ

PMDXB1200UPEZ

MOSFET 30V

NXP Semiconductors

1,046,148
PMDXB1200UPEZ

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
PMDPB95XNE2X

PMDPB95XNE2X

MOSFET 2N-CH 30V 2.7A 6HUSON

NXP Semiconductors

360,000
PMDPB95XNE2X

数据手册

- 6-UDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 30V 2.7A (Ta) 99mOhm @ 2.8A, 4.5V 1.25V @ 250µA 4.5nC @ 4.5V 258pF @ 15V 510mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
PMDPB70EN,115

PMDPB70EN,115

MOSFET 2N-CH 30V 3.5A 6HUSON

NXP USA Inc.

30,000
PMDPB70EN,115

数据手册

- 6-UFDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 57mOhm @ 3.5A, 10V 2.5V @ 250µA 4.5nC @ 10V 130pF @ 15V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
PMDPB42UN,115

PMDPB42UN,115

MOSFET 2N-CH 20V 3.9A 6HUSON

NXP USA Inc.

8,710
PMDPB42UN,115

数据手册

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.9A 50mOhm @ 3.9A, 4.5V 1V @ 250µA 3.5nC @ 4.5V 185pF @ 10V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
PMDPB56XN,115

PMDPB56XN,115

MOSFET 2N-CH 30V 3.1A 6HUSON

NXP USA Inc.

3,621
PMDPB56XN,115

数据手册

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.1A 73mOhm @ 3.1A, 4.5V 1.5V @ 250µA 2.9nC @ 4.5V 170pF @ 15V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
PHC21025,118

PHC21025,118

MOSFET N/P-CH 30V SOT96-1

NXP USA Inc.

15,846
PHC21025,118

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
2N7002PS/ZLX

2N7002PS/ZLX

MOSFET 2N-CH 60V 0.32A 6TSSOP

NXP Semiconductors

35,607
2N7002PS/ZLX

数据手册

- 6-TSSOP, SC-88, SOT-363 Bulk Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 320mA 1.6Ohm @ 500mA, 10V 2.4V @ 250µA 0.8nC @ 4.5V 50pF @ 10V - 150°C (TJ) - - Surface Mount 6-TSSOP
PMDPB38UNE,115

PMDPB38UNE,115

MOSFET 2N-CH 20V 4A 6HUSON

NXP USA Inc.

6,770
PMDPB38UNE,115

数据手册

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4A 46mOhm @ 3A, 4.5V 1V @ 250µA 4.4nC @ 4.5V 268pF @ 10V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
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