场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
BSO615CT

BSO615CT

MOSFET N/P-CH 60V 3.1A/2A 8DSO

Infineon Technologies

3,745
BSO615CT

数据手册

SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.1A, 2A 110mOhm @ 3.1A, 10V 2V @ 20µA 22.5nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
IRF7902TRPBF

IRF7902TRPBF

MOSFET 2N-CH 30V 6.4A/9.7A 8SO

Infineon Technologies

7,357
IRF7902TRPBF

数据手册

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.4A, 9.7A 22.6mOhm @ 6.4A, 10V 2.25V @ 25µA 6.9nC @ 4.5V 580pF @ 15V 1.4W, 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
BSO612CVGHUMA1

BSO612CVGHUMA1

MOSFET N/P-CH 60V 3A/2A 8DSO

Infineon Technologies

5,261
BSO612CVGHUMA1

数据手册

SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 60V 3A, 2A 120mOhm @ 3A, 10V 4V @ 20µA 15.5nC @ 10V 340pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
BSO615NGHUMA1

BSO615NGHUMA1

MOSFET 2N-CH 60V 2.6A 8DSO

Infineon Technologies

9,784
BSO615NGHUMA1

数据手册

SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 2.6A 150mOhm @ 2.6A, 4.5V 2V @ 20µA 20nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
IRF7328TRPBFXTMA1

IRF7328TRPBFXTMA1

MOSFET 2P-CH 30V 8A 8DSO-902

Infineon Technologies

5,673
IRF7328TRPBFXTMA1

数据手册

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 8A (Ta) 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-902
IRF5810

IRF5810

MOSFET 2P-CH 20V 2.9A 6TSOP

Infineon Technologies

5,222
IRF5810

数据手册

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.9A 90mOhm @ 2.9A, 4.5V 1.2V @ 250µA 9.6nC @ 4.5V 650pF @ 16V 960mW - - - Surface Mount 6-TSOP
IRF7504TR

IRF7504TR

MOSFET 2P-CH 20V 1.7A MICRO8

Infineon Technologies

4,270
IRF7504TR

数据手册

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.7A 270mOhm @ 1.2A, 4.5V 700mV @ 250µA 8.2nC @ 4.5V 240pF @ 15V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
IRF5850

IRF5850

MOSFET 2P-CH 20V 2.2A 6TSOP

Infineon Technologies

4,811
IRF5850

数据手册

- SOT-23-6 Thin, TSOT-23-6 Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135mOhm @ 2.2A, 4.5V 1.2V @ 250µA 5.4nC @ 4.5V 320pF @ 15V 960mW - - - Surface Mount 6-TSOP
IRF5850TR

IRF5850TR

MOSFET 2P-CH 20V 2.2A 6TSOP

Infineon Technologies

3,811
IRF5850TR

数据手册

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135mOhm @ 2.2A, 4.5V 1.2V @ 250µA 5.4nC @ 4.5V 320pF @ 15V 960mW -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
IRF5810TR

IRF5810TR

MOSFET 2P-CH 20V 2.9A 6TSOP

Infineon Technologies

2,621
IRF5810TR

数据手册

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.9A 90mOhm @ 2.9A, 4.5V 1.2V @ 250µA 9.6nC @ 4.5V 650pF @ 16V 960mW -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
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