| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GE12047BCA3MOSFET 2N-CH 1200V 475A GE Aerospace |
4,201 |
|
数据手册 |
SiC Power | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 475A | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1248nC @ 18V | 29300pF @ 600V | 1250W | -55°C ~ 150°C (Tc) | - | - | Chassis Mount | - |
|
GE12047CCA3MOSFET 2N-CH 1200V 475A MODULE GE Aerospace |
3,881 |
|
数据手册 |
SiC Power | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 475A | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1248nC @ 18V | 29300pF @ 600V | 1250W | -55°C ~ 150°C (Tc) | - | - | Chassis Mount | Module |
|
GE17042CCA3MOSFET 2N-CH 1700V 425A MODULE GE Aerospace |
2,364 |
|
数据手册 |
SiC Power | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1207nC @ 18V | 29100pF @ 900V | 1250W | 175°C (TJ) | - | - | Chassis Mount | Module |
|
GE17042BCA3MOSFET 2N-CH 1700V 425A MODULE GE Aerospace |
3,416 |
|
数据手册 |
SiC Power | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1207nC @ 18V | 29100pF @ 900V | 1250W | 175°C (TJ) | - | - | Chassis Mount | Module |
|
GE17045EEA3MOSFET 6N-CH 1700V 425A GE Aerospace |
6,428 |
|
数据手册 |
SiC Power | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1700V (1.7kV) | 425A (Tc) | 4.45mOhm @ 425A, 20V | 4.5V @ 160mA | 1207nC @ 18V | 29100pF @ 900V | 1250W (Tc) | -55°C ~ 150°C (Tc) | - | - | Chassis Mount | - |
|
GE12050EEA3MOSFET 6N-CH 1200V 475A MODULE GE Aerospace |
6,824 |
|
数据手册 |
SiC Power | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 475A (Tc) | 4.4mOhm @ 475A, 20V | 4.5V @ 160mA | 1248nC @ 18V | 29300pF @ 600V | 1250W (Tc) | -55°C ~ 150°C (Tc) | - | - | Chassis Mount | Module |
|
GE17140CEA3MOSFET 2N-CH 1700V 1.275KA MODUL GE Aerospace |
3,899 |
|
数据手册 |
SiC Power | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1700V (1.7kV) | 1.275kA | - | 4.5V @ 480mA | 3621nC @ 18V | 82nF @ 600V | 3.75kW | -55°C ~ 150°C (Tc) | - | - | Chassis Mount | Module |